A Physics-Based Compact Model of SiC Power MOSFETs

被引：68

作者：

Kraus, Rainer ^{[1
]}

Castellazzi, Alberto ^{[2
]}

机构：

[1] Univ Bundeswehr, Dept Elect Engn & Informat Technol, D-85577 Neubiberg, Germany

[2] Univ Nottingham, Dept Elect & Elect Engn, Nottingham NG7 2RD, England

来源：

IEEE TRANSACTIONS ON POWER ELECTRONICS | 2016年 / 31卷 / 08期

关键词：

Compact model; drain resistance; interface traps; power MOSFET; silicon carbide; EXTRACTION; DEVICES; DESIGN;

D O I：

10.1109/TPEL.2015.2488106

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The presented compact model of SiC power MOSFETs is based on a thorough consideration of the physical phenomena which are important for the device characteristics and its electrothermal behavior. The model includes descriptions of the dependence of channel charge and electron mobility on the charge of interface traps and a simple but effective calculation of the voltage-dependent drain resistance. Comparisons with both physical 2-D device simulations and experiments validate the correctness of the modeling approach and the accuracy of the results.

引用

页码：5863 / 5870

页数：8

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