Characterization of the ultrathin HfO2 and Hf-silicate films grown by atomic layer deposition

被引：32

作者：

Chen, Tze Chiang ^{[1
]}

Peng, Cheng-Yi

Tseng, Chih-Hung

Liao, Ming-Han

Chen, Mei-Hsin

Wu, Chih-I

Chern, Ming-Yau

Tzeng, Pei-Jer

Liu, Chee Wee

机构：

[1] Natl Taiwan Univ, Dept Elect Engn, Grad Inst Elect Engn, Taipei 10617, Taiwan

[2] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 10617, Taiwan

[3] Natl Taiwan Univ, Dept Phys, Taipei 10617, Taiwan

[4] Ind Technol Res Inst, Elect Res & Serv Org, Hsinchu 310, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2007年 / 54卷 / 04期

关键词：

Fourier transform infrared (FTIR); HfO2; Hf-silicate; high-k; X-ray photoelectron spectroscopy (XPS); X-ray reflectivity (XRR);

D O I：

10.1109/TED.2007.892012

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The physical properties of HfO2 and Hf-silicate layers grown by the atomic layer chemical vapor deposition are characterized as a function of the Hf concentration and the annealing temperature. The peaks of Fourier transform infrared spectra at 960, 900, and 820 cm(-1) originate from Hf-O-Si chemical bonds, revealing that a Hf-silicate interfacial layer began to form at the HfO2/SiO2 interface after postdeposition annealing process at 600 degrees C for 1 min. Moreover, the intensity of the peak at 750 cm(-1) can indicate the degree of crystallization of HfO2. The formed Hf-silicate layer between HfO2 and SiO2 is also confirmed by X-ray photoelectron spectroscopy.

引用

页码：759 / 766

页数：8

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