A Bonded Template-Assisted Monolithic Iintegration Platform

被引：1

作者：

Hu, Yingtao ^{[1
]}

Liang, Di ^{[1
]}

Kurczveil, Geza ^{[1
]}

Beausoleil, Raymond G. ^{[1
]}

机构：

[1] Hewlett Packard Enterprise, Hewlett Packard Labs, Palo Alto, CA 94304 USA

来源：

OPTOELECTRONIC DEVICES AND INTEGRATION VIII | 2019年 / 11184卷

关键词：

Integrated Photonics; Silicon Photonics; Heterogeneous Integration; Monolithic Integration; Diode Lasers;

D O I：

10.1117/12.2539077

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We present room-temperature continuous-wave lasing of 1.31 mu m multi-quantum well lasers on a novel defect-free heterogeneous III-V-on-silicon integration platform. The epitaxially grown laser structure on the platform shows significantly low dislocation density of 9.5x10(4) cm(-2), leading to a minimal threshold current density of 813 A/cm(2). These results bring promise to create multi functionalities like source, modulation and detection, etc. on such a defect-free, low-cost, large-scale substrate for Datacom applications.

引用

页数：5

共 5 条

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