CMOS Active-Pixel Sensor in Low Temperature

被引：0

作者：

do Rosario, Pedro V. F. ^{[1
]}

Salles, Luciana P. ^{[1
]}

de Mello, Artur S. B. ^{[1
]}

de Lima Monteiro, Davies W. ^{[1
]}

机构：

[1] Univ Fed Minas Gerais, Dept Elect Engn, OptMAlab, BR-31270010 Belo Horizonte, MG, Brazil

来源：

2014 29th Symposium on Microelectronics Technology and Devices (SBMicro) | 2014年

关键词：

Active Pixel Sensor; cryogenic circuits; low temperature; CMOS analog integrated circuits; photodiode; optical sensor; integrated optoelectronics;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents experimental and simulated results of an Active-Pixel Sensor (APS) circuit operating at different temperatures (300K, 17K, 60K and 40K). The optical sensor used was a silicon photodiode integrated with its electronics in a standard CMOS 0.35 mu m technology. Interestingly, the pixel worked well at all temperatures tested. These first experimental results are very promising for future hybridization between APS circuits and infrared quantum sensors, mostly on III-V semiconductor substrates, or other applications demanding low temperatures.

引用

页数：4

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