Effects of Breakdown Voltage on Single-Event Burnout Tolerance of High-Voltage SiC Power MOSFETs

被引：41

作者：

Ball, D. R. ^{[1
]}

Galloway, K. F. ^{[1
]}

Johnson, R. A. ^{[1
]}

Alles, M. L. ^{[1
]}

Sternberg, A. L. ^{[1
]}

Witulski, A. F. ^{[1
]}

Reed, R. A. ^{[1
]}

Schrimpf, R. D. ^{[1
]}

Hutson, J. M. ^{[2
]}

Lauenstein, J-M ^{[3
]}

机构：

[1] Vanderbilt Univ, Dept Elect Engn & Comp Sci, Nashville, TN 37235 USA

[2] David Lipscomb Univ, Dept Elect & Comp Engn, Nashville, TN 37204 USA

[3] NASA, Goddard Space Flight Ctr, Greenbelt, MD 20771 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2021年 / 68卷 / 07期

关键词：

MOSFET; Ions; Epitaxial growth; Silicon carbide; Doping; Power system measurements; Density measurement; Diode; heavy ion; power; silicon carbide (SiC); single-event burnout (SEB);

D O I：

10.1109/TNS.2021.3079846

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ion- and terrestrial neutron-induced single-event burnout (SEB) data indicate that a thicker, more lightly doped epitaxial (epi) region significantly increases the threshold at which ion-induced SEB occurs in silicon carbide (SiC) power MOSFETs and junction barrier Schottky (JBS) diodes. Simulations indicate that the reduction of power dissipation along the core of the ion track is responsible for the increased robustness of the devices that have higher breakdown voltage ratings. Implications for circuit design show that using a 3300-V power MOSFET provides a significant increase in SEB threshold margin compared to a 1200-V MOSFET, with minor impact on power dissipation during normal operation.

引用

页码：1430 / 1435

页数：6

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