A Study on the Structural Change of Al - N Co-Doped ZnO Thin Films

被引：0

作者：

Hamid, H. A. ^{[1
]}

Abdullah, M. J. ^{[1
]}

Aziz, A. A. ^{[1
]}

Al-Hardan, N. H. ^{[1
]}

机构：

[1] Univ Sains Malaysia, Sch Phys, George Town 11800, Malaysia

来源：

INTERNATIONAL CONFERENCE ON ADVANCEMENT OF MATERIALS AND NANOTECHNOLOGY 2007 | 2010年 / 1217卷

关键词：

Zinc oxide; Thin film; Co-Doping; MOLECULAR-BEAM EPITAXY; ROOM-TEMPERATURE; SAPPHIRE; GROWTH;

D O I：

10.1063/1.3377805

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The co-doped ZnO thin film were deposited by DC magnetron sputtering on silicon (111) followed by annealing treatment at 200 degrees C to 600 degrees C for 1 hour in nitrogen and oxygen gas mixture. Structural investigation was carried out by atomic force microscopy (AFM), scanning electron microscopy (SEM) with energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD). Film roughness (r.m.s) and grain shape were found to be correlated with the annealing temperatures. SEM result has shown that its surface characteristics are strongly influenced by annealing temperatures.

引用

页码：166 / 170

页数：5

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