Recent developments in the III-nitride materials

被引：34

作者：

Monemar, B. ^{[1
]}

Paskov, P. P.

Bergman, J. P.

Toropov, A. A.

Shubina, T. V.

机构：

[1] Linkoping Univ, Dept Phys Chem & Biol, S-58183 Linkoping, Sweden

[2] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2007年 / 244卷 / 06期

关键词：

D O I：

10.1002/pssb.200674836

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We review a selection of recent research work on Ill-nitride materials, limiting the scope to bulk properties and quantum well structures. The different stages of development of the compounds AlN, GaN and InN are illustrated, with reference to the electronic properties demonstrated so far. The important alloy systems AlxGa1-xN and InxGa1-xN have quite different properties, still not understood in detail for high Al and In contents, respectively. Some important unresolved issues are highlighted, and possible future directions of the materials development are indicated. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1759 / 1768

页数：10

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