Structural characterization of InxGa1-xN/GaN films grown by MOCVD

被引：0
|
作者：
Piscopiello, E [1 ]
Catalano, M [1 ]
Antisari, MV [1 ]
Passaseo, A [1 ]
Cingolani, R [1 ]
Berti, M [1 ]
Drigo, AV [1 ]
机构：
[1] Univ Lecce, Unita INFM, Dip Ingn Innovaz, I-73100 Lecce, Italy
来源：
PROCEEDINGS OF THE 5TH MULTINATIONAL CONGRESS ON ELECTRON MICROSCOPY | 2001年
关键词：
D O I：
暂无
中图分类号：
TH742 [显微镜];
学科分类号：
摘要：
引用
收藏
页码：321 / 322
页数：2
相关论文
共 50 条
  • [1] Microstructures of GaN and InxGa1-xN films grown by MOCVD on freestanding GaN templates
    Jasinski, J
    Liliental-Weber, Z
    Huang, D
    Reshchikov, MA
    Yun, F
    Morkoc, H
    Sone, C
    Park, SS
    Lee, KY
    MATERIALS AND DEVICES FOR OPTOELECTRONICS AND MICROPHOTONICS, 2002, 722 : 79 - 90
  • [2] Structural study of the influence of different growth parameters on the quality of InxGa1-xN/GaN films grown by MOCVD
    Piscopiello, E
    Catalano, M
    Antisari, MV
    Passaseo, A
    Cingolani, R
    Berti, M
    Drigo, AV
    MICROSCOPY OF SEMICONDUCTING MATERIALS 2001, 2001, (169): : 285 - 288
  • [3] Refractive index and birefringence of InxGa1-xN films grown by MOCVD
    Sanford, NA
    Munkholm, A
    Krames, MR
    Shapiro, A
    Levin, I
    Davydov, AV
    Sayan, S
    Wielunski, LS
    Madey, TE
    Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 7, 2005, 2 (07): : 2783 - 2786
  • [4] Characterization of GaN and InxGa1-xN films grown by MOCVD and MBE on free-standing GaN templates and quantum well structures
    Ramaiah, KS
    Huang, D
    Reshchikov, MA
    Yun, F
    Morkoç, H
    Jasinski, J
    Liliental-Weber, Z
    Sone, C
    Park, SS
    Lee, KY
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2003, 14 (04) : 233 - 245
  • [5] Optical and structural properties of InxGa1-xN films on tensile-strained GaN/Si(111) structures grown by using MOCVD
    Lee, KJ
    Oh, TS
    Kim, TK
    Yang, GM
    Lim, KY
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2005, 47 (05) : 842 - 846
  • [6] Influence of the N2/H2 ratio on the structural features of InxGa1-xN/GaN films grown by MOCVD
    Piscopiello, E
    Catalano, M
    Antisari, MV
    Passaseo, A
    Branca, E
    Cingolani, R
    Berti, M
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 87 (03): : 237 - 243
  • [7] Strain relaxation in InxGa1-xN epitaxial films grown coherently on GaN
    Park, SE
    O, B
    Lee, CR
    JOURNAL OF CRYSTAL GROWTH, 2003, 249 (3-4) : 455 - 460
  • [8] Growth and Characterization of InXGa1-XN/GaN Single Quantum Well Prepared by MOCVD
    Prabakaran, K.
    Ramesh, R.
    Jayasakthi, M.
    Loganathan, R.
    Arivazhagan, P.
    Baskar, K.
    PROCEEDINGS OF THE 59TH DAE SOLID STATE PHYSICS SYMPOSIUM 2014 (SOLID STATE PHYSICS), 2015, 1665
  • [9] Specifics of MOCVD formation of InxGa1-xN inclusions in a GaN matrix
    Soshnikov, IP
    Lundin, VV
    Usikov, AS
    Kalmykova, IP
    Ledentsov, NN
    Rosenauer, A
    Neubauer, B
    Gerthsen, D
    SEMICONDUCTORS, 2000, 34 (06) : 621 - 625
  • [10] Temperature dependence in preparation of InxGa1-xN/GaN MQWs by MOCVD
    Li, Pei-Xian
    Hao, Yue
    Guangzi Xuebao/Acta Photonica Sinica, 2007, 36 (01): : 34 - 38
12345