Effect of carrier gas on the structure and electrical properties of low dielectric constant SiCOH film using trimethylsilane prepared by plasma enhanced chemical vapor deposition

被引：16

作者：

Cheng, YL ^{[1
]}

Wang, Y

Lan, JK

Chen, HC

Lin, JH

Wu, Y

Liu, PT

Wu, Y

Feng, MS

机构：

[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu, Taiwan

[2] Taiwan Semicond Mfg Co Ltd, Hsinchu, Taiwan

[3] Natl Chi Nan Univ, Dept Elect Engn, Nantou, Taiwan

[4] Natl Chiao Tung Univ, Display Inst, Dept Photon, Hsinchu, Taiwan

[5] Natl Nano Device Lab, Hsinchu, Taiwan

来源：

THIN SOLID FILMS | 2004年 / 469卷

关键词：

low-k; carrier gas; plasma-enhanced chemical vapor deposition;

D O I：

10.1016/j.tsf.2004.08.159

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

For a low dielectric constant inter-metal dielectric application, the low-k SiCOH film with a dielectric constant of 2.8-3.2 has been deposited by plasma-enhanced chemical vapor deposition (PE-CVD) with trimethylsilane (3MS), oxygen, and the carrier gas. In this work, we present the effects of the carrier gas on the characterizations of the low-k films, including reaction mechanism, the deposition rate, and the mechanical and electrical properties. According to the experimental results, the low-k film in Ar carrier gas exhibits the improvement in deposition rate, nonuniformity, leakage current, and hardness. In addition, the dielectric constant of the deposited low-k film is slightly sacrificed due to the decrease of micropores in the deposited films. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：178 / 183

页数：6