Simulation of suppression of floating-body effect in partially depleted SOI MOSFET using a Si1-xGex dual source structure

被引：10

作者：

Zhu, M

Chen, P

Fu, RKY

Liu, WL

Lin, CL

Chu, PK

机构：

[1] City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Res Ctr Funct Semicond Film Engn & Technol, Shanghai 200050, Peoples R China

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2004年 / 114卷

关键词：

partially depleted SOI MOSFET; floating body effect; bandgap narrowing; impact ionization;

D O I：

10.1016/j.mseb.2004.07.070

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of the Si1-xGex source with an underlying p(+) region on the suppression of the floating body effects in a partially depleted silicon-on-insulator (SOI) metal oxide silicon field effect transistor (MOSFET) is numerically investigated. Compared to a conventional SOI MOSFET, the kink effect and anomalous sub-threshold slope are reduced and the breakdown voltage is substantially increased. The detailed suppression mechanism is also studied. Our results suggest that the narrow bandgap Si1-xGex source and buried p(+) region are favorable to the dispersion of holes generated by impact ionization. (C) 2004 Published by Elsevier B.V.

引用

页码：264 / 268

页数：5