Effect of p-type buffer layer on the properties of GaMnAs ferromagnetic semiconductors

被引：0

作者：

Yoon, YJ

Chung, SJ

Lee, HJ

Lee, S ^{[1
]}

An, SY

Liu, X

Furdyna, JK

机构：

[1] Korea Univ, Dept Phys, Seoul 136701, South Korea

[2] Korea Inst Sci & Technol, Seoul 136791, South Korea

[3] Univ Notre Dame, Dept Phys, Notre Dame, IN 46556 USA

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2004年 / 45卷

关键词：

diluted magnetic semiconductor; (Ga; Mn)As;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have studied the magnetic and transport properties of Ga1-xMnxAs epilayers grown either on undoped or on p-type doped GaAs buffer layer. The temperature dependence of the resistivity at zero magnetic field reveals that the Curie temperature (T-C) in the Ga1-xMnxAs layer grown on p-type doped GaAs buffer is slightly higher than that observed in the layer grown on undoped GaAs buffer. The magnetic and transport properties of the two samples show significant differences when they are placed in a magnetic field. In SQUID measurements, the Ga1-xMnxAs layer grown on p-type buffer shows a larger coercive field and much slower decay of remanent magnetization than the layer grown on undoped buffer. This robust magnetic behavior observed in the doped sample is discussed in terms of the increase of free carrier concentration in the system arising from p-type doping in the buffer layer.

引用

页码：S720 / S723

页数：4