Pseudospin in Si δ-doped InAlAs/InGaAs/InAlAs single quantum well

被引：2
作者：
Zhou, W. Z.
Huang, Z. M.
Qiu, Z. J.
Lin, T.
Shang, L. Y.
Li, D. L.
Gao, H. L.
Cui, L. J.
Zeng, Y. P.
Guo, S. L.
Gui, Y. S.
Dai, N.
Chu, J. H. [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China
[2] Guangxi Univ, Phys Sci & Technol Coll, Nanning 530004, Guangxi, Peoples R China
[3] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
[4] E China Normal Univ, SITP Joint Lab Imaging Informat, Shanghai 200062, Peoples R China
[5] Fudan Univ, Sch Microelect, Shanghai 200433, Peoples R China
来源：
SOLID STATE COMMUNICATIONS | 2007年 / 142卷 / 07期
基金：
中国国家自然科学基金;
关键词：
quantum wells; electronic transport; tunnelling;
D O I：
10.1016/j.ssc.2007.03.014
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Magneto-transport measurements have been carried out on double/single-barrier-doped In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As quantum well samples from 1.5 to 60 K in an applied magnetic field up to 13 T. Beating Shubnikov-de Haas oscillation is observed for the symmetrically double-barrier-doped sample and demonstrated due to a symmetric state and an antisymmetric state confined in two coupled self-consistent potential wells in the single quantum well. The energy separation between the symmetric and the antisymmetric states for the double-barrier-doped sample is extracted from experimental data, which is consistent with calculation. For the single-barrier-doped sample, only beating related to magneto-intersubband scattering shows up. The pesudospin property of the symmetrically double-barrier-doped single quantum well shows that it is a good candidate for fabricating quantum transistors. (c) 2007 Elsevier Ltd. All rights reserved.
引用
收藏
页码：393 / 397
页数：5
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