Pseudospin in Si δ-doped InAlAs/InGaAs/InAlAs single quantum well

被引：2
|
作者：
Zhou, W. Z.
Huang, Z. M.
Qiu, Z. J.
Lin, T.
Shang, L. Y.
Li, D. L.
Gao, H. L.
Cui, L. J.
Zeng, Y. P.
Guo, S. L.
Gui, Y. S.
Dai, N.
Chu, J. H. [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China
[2] Guangxi Univ, Phys Sci & Technol Coll, Nanning 530004, Guangxi, Peoples R China
[3] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
[4] E China Normal Univ, SITP Joint Lab Imaging Informat, Shanghai 200062, Peoples R China
[5] Fudan Univ, Sch Microelect, Shanghai 200433, Peoples R China
来源：
SOLID STATE COMMUNICATIONS | 2007年 / 142卷 / 07期
基金：
中国国家自然科学基金;
关键词：
quantum wells; electronic transport; tunnelling;
D O I：
10.1016/j.ssc.2007.03.014
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Magneto-transport measurements have been carried out on double/single-barrier-doped In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As quantum well samples from 1.5 to 60 K in an applied magnetic field up to 13 T. Beating Shubnikov-de Haas oscillation is observed for the symmetrically double-barrier-doped sample and demonstrated due to a symmetric state and an antisymmetric state confined in two coupled self-consistent potential wells in the single quantum well. The energy separation between the symmetric and the antisymmetric states for the double-barrier-doped sample is extracted from experimental data, which is consistent with calculation. For the single-barrier-doped sample, only beating related to magneto-intersubband scattering shows up. The pesudospin property of the symmetrically double-barrier-doped single quantum well shows that it is a good candidate for fabricating quantum transistors. (c) 2007 Elsevier Ltd. All rights reserved.
引用
收藏
页码：393 / 397
页数：5
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