Influence of substrate bias on the structure and properties of ZrN films deposited by cathodic vacuum arc

被引:38
|
作者
Niu, E. W. [1 ]
Li, L. [1 ]
Lv, G. H. [1 ]
Chen, H. [1 ]
Feng, W. R. [1 ]
Fan, S. H. [1 ]
Yang, S. Z. [1 ]
Yang, X. Z. [1 ]
机构
[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter, Beijing 100080, Peoples R China
关键词
ZrN films; cathodic vacuum arc; substrate bias;
D O I
10.1016/j.msea.2007.02.085
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
ZrN films were deposited by cathodic vacuum arc (CVA) technique in N-2 atmosphere at low temperature with different substrate bias. The ZrN films deposited are atomically smooth. The influence of Substrate bias at the wide range (0 to -500 V) on the deposition rate, surface morphology, crystal structure, internal stress, and mechanical properties of the ZrN films were systematically investigated. Increasing substrate bias results in the decrease of deposition rate and the increase of surface roughness. It was found that there is a strong correlation between the substrate bias, film structure and properties. At the bias of 0 V, ZrN films characterize with random orientation, low surface roughness, small grain size. With the increase of bias, the structure changes from random orientation to ( 1 1 1) preferred orientation and then to (2 2 0) orientation. As substrate bias increases to about - 150 V, the internal stress, hardness and Young's modulus increase to maximum. A further increase of bias results in the gradual decrease to lower level. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:135 / 139
页数:5
相关论文
共 50 条
  • [1] Effect of pulsed bias on the properties of ZrN/TiZrN films deposited by a cathodic vacuum arc
    张国平
    王兴权
    吕国华
    周澜
    黄骏
    陈维
    杨思泽
    Chinese Physics B, 2013, (03) : 379 - 383
  • [2] Effect of pulsed bias on the properties of ZrN/TiZrN films deposited by a cathodic vacuum arc
    Zhang Guo-Ping
    Wang Xing-Quan
    Lu Guo-Hua
    Zhou Lan
    Huang Jun
    Chen Wei
    Yang Si-Ze
    CHINESE PHYSICS B, 2013, 22 (03)
  • [3] Influence of pulsed substrate bias on the structure and properties of Ti-Al-N films deposited by cathodic vacuum arc
    Zhang, G. P.
    Gao, G. J.
    Wang, X. Q.
    Lv, G. H.
    Zhou, L.
    Chen, H.
    Pang, H.
    Yang, S. Z.
    APPLIED SURFACE SCIENCE, 2012, 258 (19) : 7274 - 7279
  • [4] Influence of substrate bias on the structure and mechanical properties of ta-C:W films deposited by filtered cathodic vacuum arc
    Cheng, YH
    Tay, BK
    Lau, SR
    Shi, X
    SURFACE & COATINGS TECHNOLOGY, 2001, 146 : 398 - 404
  • [5] Influence of substrate bias on the structure and properties of (Ti,Al)N films deposited by filtered cathodic vacuum are
    Cheng, YH
    Tay, BK
    Lau, SP
    Shi, X
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2001, 19 (03): : 736 - 742
  • [6] Influence of substrate bias on the microstructure and internal stress in Cu films deposited by filtered cathodic vacuum arc
    Cheng, YH
    Tay, BK
    Lau, SP
    Shi, X
    Tan, HS
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2001, 19 (05): : 2102 - 2108
  • [7] Substrate bias dependence of the structure and internal stress of TiN films deposited by the filtered cathodic vacuum arc
    Cheng, YH
    Tay, BK
    Lau, SP
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2002, 20 (04): : 1327 - 1331
  • [8] Effect of substrate bias on microstructures of zirconia thin films deposited by cathodic vacuum arc
    Li Xiang-Zhou
    Zhang Xian-Hui
    He Ping
    Niu Er-Wu
    Xia Yuan-Yu
    Huang Jun
    Feng Ke-Cheng
    Yang Si-Ze
    CHINESE PHYSICS LETTERS, 2007, 24 (06) : 1633 - 1636
  • [9] Substrate bias dependence of Raman spectra for TiN films deposited by filtered cathodic vacuum arc
    Cheng, Y.H.
    Tay, B.K.
    Lau, S.P.
    Kupfer, H.
    Richter, F.
    Journal of Applied Physics, 2002, 92 (04): : 1845 - 1849
  • [10] Substrate bias dependence of Raman spectra for TiN films deposited by filtered cathodic vacuum arc
    Cheng, YH
    Tay, BK
    Lau, SP
    Kupfer, H
    Richter, F
    JOURNAL OF APPLIED PHYSICS, 2002, 92 (04) : 1845 - 1849