Effect of the deposition rate on the phase transition in silver telluride thin films

被引：0

作者：

Gnanadurai, P. ^{[1
]}

Soundararajan, N. ^{[2
]}

Sooriamoorthy, C. E. ^{[3
]}

机构：

[1] NMSSVN Coll, Dept Phys, Madurai 625019, Tamil Nadu, India

[2] Madurai Kamaraj Univ, Sch Phys, Madurai 625021, Tamil Nadu, India

[3] Madurai Kamaraj Univ, Sch Energy Sci, Madurai 625021, Tamil Nadu, India

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2016年 / 47卷

关键词：

Silver telluride; Deposition rate; Electrical resistivity; Phase transition; ELECTRONIC PROCESSES; THERMAL HYSTERESIS; AG2TE; TRANSFORMATION; THICKNESS; AG2SE; TEMPERATURE; DEPENDENCE; NANOWIRES;

D O I：

10.1016/j.mssp.2016.02.009

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Silver telluride thin films of thickness 50 nm have been deposited at different deposition rates on glass substrates at room temperature and at a pressure of 2 x 10(-5) mbar. The electrical resistivity was measured in the temperature range 300-430 K. The temperature dependence of the electrical resistance of Ag2Te thin films shows structural phase transition and coexistence of low temperature monoclinic phase and high temperature cubic phase. The effect of deposition rate on the phase transition and the electrical resistivity of silver telluride thin films in relation to carrier concentration and mobility are discussed. (C) 2016 Elsevier Ltd. All rights reserved.

引用

页码：12 / 15

页数：4

共 33 条

[1]

Aliev S.A., 1974, SOV PHYS SEMICOND, V7, P1383

[2]

ALIEV SA, 1989, INORG MATER+, V25, P204

[3]

ALIEV SA, 1988, INORG MATER+, V24, P1187

[4]

APPEL J, 1955, Z NATURFORSCH PT A, V10, P530

[5] THE INFLUENCE OF DEPOSITION PARAMETERS ON THE LOW-TEMPERATURE RESISTIVITY OF ALPHA-MN THIN-FILMS [J].

BOAKYE, F ;

GRASSIE, ADC .

THIN SOLID FILMS, 1992, 221 (1-2) :224-227

[6]

Ching-Liang C., 1961, SOPV PHYS CRYSTALLOG, V6, P618

[7] INFLUENCE OF DEPOSITION PARAMETERS ON COALESCENCE STAGE OF GROWTH OF METAL FILMS [J].

CHOPRA, KL ;

RANDLETT, MR .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (03) :1874-&

[8]

Chuprakov L.S., 1998, APPL PHYS LETT, V7221, P65

[9] SEMICONDUCTING BEHAVIOR OF AG2TE THIN-FILMS AND THE DEPENDENCE OF BAND-GAP ON THICKNESS [J].

DAS, VD ;

KARUNAKARAN, D .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) :5252-5255

[10] THERMAL HYSTERESIS DURING PHASE-TRANSITION IN AG2TE THIN-FILMS - THICKNESS EFFECT [J].

DAS, VD ;

KARUNAKARAN, D .

JOURNAL OF APPLIED PHYSICS, 1989, 66 (04) :1822-1825

← 1 2 3 4 →