Fabrication of Single Crystal Gallium Phosphide Thin Films on Glass

被引：24

作者：

Emmer, Hal ^{[1
]}

Chen, Christopher T. ^{[1
]}

Saive, Rebecca ^{[1
]}

Friedrich, Dennis ^{[2
,3
]}

Horie, Yu ^{[1
]}

Arbabi, Amir ^{[1
]}

Faraon, Andrei ^{[1
]}

Atwater, Harry A. ^{[1
]}

机构：

[1] CALTECH, Appl Phys & Mat Sci, Pasadena, CA 91125 USA

[2] CALTECH, Joint Ctr Artificial Photosynth, Pasadena, CA 91125 USA

[3] Helmholtz Zentrum Berlin Mat & Energie GmbH, Inst Solar Fuels, Hahn Meitner Pl 1, D-14109 Berlin, Germany

来源：

SCIENTIFIC REPORTS | 2017年 / 7卷

关键词：

LIFT-OFF; ABSORPTION; LIGHT; GAAS; GAP; GE; SI;

D O I：

10.1038/s41598-017-05012-w

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Due to its high refractive index and low absorption coefficient, gallium phosphide is an ideal material for photonic structures targeted at the visible wavelengths. However, these properties are only realized with high quality epitaxial growth, which limits substrate choice and thus possible photonic applications. In this work, we report the fabrication of single crystal gallium phosphide thin films on transparent glass substrates via transfer bonding. GaP thin films on Si ( 001) and ( 112) grown by MOCVD are bonded to glass, and then the growth substrate is removed with a XeF2 vapor etch. The resulting GaP films have surface roughnesses below 1 nm RMS and exhibit room temperature band edge photoluminescence. Magnesium doping yielded p-type films with a carrier density of 1.6 x 10(17) cm(-3) that exhibited mobilities as high as 16 cm(2)V(-1)s(-1). Due to their unique optical properties, these films hold much promise for use in advanced optical devices.

引用

页数：6

共 28 条

[1] Guiding and confining light in void nanostructure
Almeida, VR
Xu, QF
Barrios, CA
Lipson, M
[J]. OPTICS LETTERS, 2004, 29 (11) : 1209 - 1211
[2] Arbabi A, 2015, NAT NANOTECHNOL, V10, P937, DOI [10.1038/nnano.2015.186, 10.1038/NNANO.2015.186]
[3] Subwavelength-thick lenses with high numerical apertures and large efficiency based on high-contrast transmitarrays
Arbabi, Amir
Horie, Yu
Ball, Alexander J.
Bagheri, Mahmood
Faraon, Andrei
[J]. NATURE COMMUNICATIONS, 2015, 6
[4] DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV
ASPNES, DE
STUDNA, AA
[J]. PHYSICAL REVIEW B, 1983, 27 (02) : 985 - 1009
[5] CHEMICAL ETCHING OF (100) GAAS IN A SULFURIC-ACID HYDROGEN-PEROXIDE WATER-SYSTEM
BARYCKA, I
ZUBEL, I
[J]. JOURNAL OF MATERIALS SCIENCE, 1987, 22 (04) : 1299 - 1304
[6] Pyramidal Structure Formation at the Interface between III/V Semiconductors and Silicon
Beyer, Andreas
Stegmueller, Andreas
Oelerich, Jan O.
Jandieri, Kakhaber
Werner, Katharina
Mette, Gerson
Stolz, Wolfgang
Baranovskii, Sergei D.
Tonner, Ralf
Volz, Kerstin
[J]. CHEMISTRY OF MATERIALS, 2016, 28 (10) : 3265 - 3275
[7] Callahan D., 2015, NANOPHOTONIC LIGHT T
[8] Chen C, 2015, THESIS
[9] Chu P. B., 1997, SOL STAT SENS ACT 19, V661, P665
[10] Darnon M., 2015, AIP C P, V1679

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