Evolution equation for a thin epitaxial film on a deformable substrate

被引:42
作者
Tekalign, WT [1 ]
Spencer, BJ [1 ]
机构
[1] SUNY Buffalo, Dept Math, Buffalo, NY 14260 USA
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.1766084
中图分类号
O59 [应用物理学];
学科分类号
摘要
We consider a continuum model for the evolution of an epitaxially strained dislocation-free thin solid film on a deformable substrate in the absence of vapor deposition. By using a thin-film approximation we derived a nonlinear evolution equation. We examined the nonlinear evolution equation and found that there is a critical film thickness below which every film thickness is stable and a critical wave number above which every film thickness is stable. Preliminary numerical results indicate that the equation possesses island-like steady state solutions. (C) 2004 American Institute of Physics.
引用
收藏
页码:5505 / 5512
页数:8
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