Fabrication and electrical properties of SrTiO3/diamond junctions

被引：3

作者：

Chen, Guang-chao ^{[1
,2
]}

Liao, Meiyong ^{[1
]}

Imura, Masataka ^{[3
]}

Nakajima, Kiyomi ^{[4
]}

Sugimoto, Yoshimasa ^{[4
]}

Koide, Yasuo ^{[1
,4
]}

机构：

[1] Natl Inst Mat Sci, Sensor Mat Ctr, Tsukuba, Ibaraki 3050044, Japan

[2] Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing 100083, Peoples R China

[3] Natl Inst Mat Sci, Int Ctr Mat Nanoarchtechton MANA, Tsukuba, Ibaraki 3050044, Japan

[4] Natl Inst Mat Sci, Nanoinnovat Ctr, Tsukuba, Ibaraki 3050047, Japan

来源：

关键词：

STO; Single crystal diamond; Diode; Leakage; DIAMOND;

D O I：

10.1016/j.diamond.2010.01.001

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Strontium titanate (STO) films were directly deposited on lb (100) single crystal diamond by r.f. magnetron sputtering. The as-deposited STO film was in amorphous state. On the other hand, the crystalline STO film was obtained under the optimized condition of a deposition temperature of 250 degrees C and a post-annealing temperature of 650 degrees C. STO/diamond junctions were fabricated on boron-doped homoepitaxial layers grown on p(+)-type single crystal diamond substrates. Electrical properties of the STO/diamond junction were investigated by changing the surface terminations of diamond with hydrogen or oxygen and the crystallinity of the STO film. It was found that the amorphous STO acted like a semi-insulator on H-diamond surface and that the amorphous STOIC-diamond junction behaved like a Schottky diode. The crystalline STO/O-diamond showed a complex rectifying behavior. The crystalline STO film possessed a higher dielectric constant as compared to that of the amorphous one. Crown Copyright (C) 2010 Published by Elsevier BM. All rights reserved.

引用

页码：319 / 323

页数：5

共 22 条

[1] Effective masses of electrons in n-type SrTiO3 determined from low-temperature specific heat capacities [J].

Ahrens, M. ;

Merkle, R. ;

Rahmati, B. ;

Maier, J. .

PHYSICA B-CONDENSED MATTER, 2007, 393 (1-2) :239-248

[2] High-performance diamond/amorphous silicon p-n+ heterojunctions [J].

Chen, YG ;

Ogura, M ;

Kondo, M ;

Okushi, H .

APPLIED PHYSICS LETTERS, 2004, 85 (11) :2110-2112

[3] Schottky-barrier photodiode using p-diamond epilayer grown on p+-diamond substrates [J].

Imura, Masataka ;

Liao, Meiyong ;

Alvarez, Jose ;

Koide, Yasuo .

[4] High carrier mobility in single-crystal plasma-deposited diamond [J].

Isberg, J ;

Hammersberg, J ;

Johansson, E ;

Wikström, T ;

Twitchen, DJ ;

Whitehead, AJ ;

Coe, SE ;

Scarsbrook, GA .

SCIENCE, 2002, 297 (5587) :1670-1672

[5] Diamond as a unique high-tech electronic material: difficulties and prospects [J].

Kalish, Rafi .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 40 (20) :6467-6478

[6] Diamond-based RF power transistors: Fundamentals and applications [J].

Kasu, M. ;

Ueda, K. ;

Yamauchi, Y. ;

Tallaire, A. ;

Makimoto, T. .

[7] Modeling proton transfer and polarons in a molecular crystal diamino-dinitroethylene [J].

Kimmel, Anna V. ;

Ramo, David Munoz ;

Sushko, Peter V. ;

Shluger, Alexander L. ;

Kuklja, Maija M. .

PHYSICAL REVIEW B, 2009, 80 (13)

[8] Low-temperature phase of SrTiO3 -: art. no. 032901 [J].

Levstik, A ;

Filipic, C ;

Pirc, R ;

Bobnar, V ;

Blinc, R ;

Itoh, M .

APPLIED PHYSICS LETTERS, 2005, 87 (03)

[9] Integration of (PbZr0.52Ti0.48O3) on single crystal diamond as metal-ferroelectric-insulator-semiconductor capacitor [J].

Liao, Meiyong ;

Imura, Masataka ;

Fang, Xiaosheng ;

Nakajima, Kiyomi ;

Chen, Guangchao ;

Koide, Yasuo .

APPLIED PHYSICS LETTERS, 2009, 94 (24)

[10] Thermally stable visible-blind diamond photodiode using tungsten carbide Schottky contact [J].

Liao, MY ;

Koide, Y ;

Alvarez, J .

APPLIED PHYSICS LETTERS, 2005, 87 (02)

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