MBE growth and characterization of ZnTe epilayers on m-plane sapphire substrates

被引：9

作者：

Nakasu, Taizo ^{[1
]}

Sun, Wei-Che ^{[1
]}

Yamashita, Sotaro ^{[1
]}

Aiba, Takayuki ^{[1
]}

Taguri, Kosuke ^{[1
]}

Kobayashi, Masakazu ^{[1
,2
]}

Asahi, Toshiaki ^{[3
]}

Togo, Hiroyoshi ^{[4
]}

机构：

[1] Waseda Univ, Dept Elect Engn & Biosci, Tokyo 1698555, Japan

[2] Waseda Univ, Kagami Mem Res Inst Mat Sci & Technol, Tokyo 1690051, Japan

[3] JX Nippon Min & Met Corp, Technol Dev Ctr, Hitachi, Ibaraki 3170056, Japan

[4] NTT Microsyst Integrat Labs, Atsugi, Kanagawa 2430198, Japan

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 7-8 | 2014年 / 11卷 / 7-8期

关键词：

ZnTe; sapphire; pole figure; heteroepitaxy; molecular beam epitaxy; MOLECULAR-BEAM EPITAXY; FILMS; LAYERS; GAAS;

D O I：

10.1002/pssc.201300582

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

ZnTe epilayers were grown on transparent (10-10) oriented (m-plane) sapphire substrates by molecular beam epitaxy (MBE). Pole figure imaging was used to study the domain distribution within the layer. (211)-oriented ZnTe domains were formed on m-plane sapphire. The presence of only one kind of (211) ZnTe domain formed on the 2 degrees-tilted m-plane sapphire substrates was con-firmed. Thus, single domain (211) ZnTe epilayers can be grown on the m-plane sapphire using MBE. Although differences in the crystal structure and lattice mismatch are large, precise control of the substrate surface lattice arrangement result in the formation of high-quality epitaxial layers. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1182 / 1185

页数：4

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