Investigation of AlyGa1-yN/Al0.5Ga0.5N quantum dot properties for the design of ultraviolet emitters

被引：13
作者：
Brault, Julien [1 ]
Matta, Samuel [1 ,2 ]
Thi-Huong Ngo [2 ]
Korytov, Maxim [1 ]
Rosales, Daniel [2 ]
Damilano, Benjamin [1 ]
Leroux, Mathieu [1 ]
Vennegues, Philippe [1 ]
Al Khalfioui, Mohamed [1 ,3 ]
Courville, Aimeric [1 ]
Tottereau, Olivier [1 ]
Massies, Jean [1 ]
Gil, Bernard [2 ]
机构：
[1] CNRS CRHEA, Rue B Gregory, F-06560 Valbonne, France
[2] UMR 5221, L2C, Case Courrier 074, F-34095 Montpellier 5, France
[3] Univ Nice Sophia Antipolis, F-06103 Nice, France
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2016年 / 55卷 / 05期
关键词：
LIGHT-EMITTING DIODE; MOLECULAR-BEAM EPITAXY; GAN; ALN; SAPPHIRE;
D O I：
10.7567/JJAP.55.05FG06
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Self-assembled AlyGa1-yN quantum dots (QDs), with y = 0 and 0.1, have been grown by molecular beam epitaxy on Al0.5Ga0.5N(0001) oriented layers using sapphire substrates. The QD formation has been followed in situ by reflection high energy electron diffraction (RHEED). A two-to three-dimensional (2D-3D) transition of the layer morphology is observed, characterized by a change of the RHEED pattern from streaky lines to Bragg spots. High QD densities, from 1010 up to near 10(12)cm(-2), have been obtained. By decreasing the GaN QD size and incorporating Al inside the QDs, a strong variation in the photoluminescence (PL) emission has been observed, enabling to cover a large spectral range from near UV (3 eV) to UV-B (3.95 eV). By combining temperature-dependent and time-resolved PL measurements, the internal quantum efficiency of the QDs has been determined at both low and high temperatures as a function of the PL energy. (C) 2016 The Japan Society of Applied Physics
引用
收藏
页数：6
相关论文
共 40 条
[1]  
Bigenwald P, 1999, PHYS STATUS SOLIDI B, V216, P371, DOI 10.1002/(SICI)1521-3951(199911)216:1<371::AID-PSSB371>3.0.CO
[2]  
2-S
[3]   Polar and semipolar GaN/Al0.5Ga0.5N nanostructures for UV light emitters [J].
Brault, J. ;
Rosales, D. ;
Damilano, B. ;
Leroux, M. ;
Courville, A. ;
Korytov, M. ;
Chenot, S. ;
Vennegues, P. ;
Vinter, B. ;
De Mierry, P. ;
Kahouli, A. ;
Massies, J. ;
Bretagnon, T. ;
Gil, B. .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2014, 29 (08)
[4]   Ultra-violet GaN/Al0.5Ga0.5N quantum dot based light emitting diodes [J].
Brault, J. ;
Damilano, B. ;
Kahouli, A. ;
Chenot, S. ;
Leroux, M. ;
Vinter, B. ;
Massies, J. .
JOURNAL OF CRYSTAL GROWTH, 2013, 363 :282-286
[5]   Linear alignment of GaN quantum dots on AlN grown on vicinal SiC substrates [J].
Brault, J ;
Tanaka, S ;
Sarigiannidou, E ;
Rouvière, JL ;
Daudin, B ;
Feuillet, G ;
Nakagawa, H .
JOURNAL OF APPLIED PHYSICS, 2003, 93 (05) :3108-3110
[6]   Tailoring the shape of GaN/AlxGa1-xN nanostructures to extend their luminescence in the visible range [J].
Brault, J. ;
Huault, T. ;
Natali, F. ;
Damilano, B. ;
Lefebvre, D. ;
Leroux, M. ;
Korytov, M. ;
Massies, J. .
JOURNAL OF APPLIED PHYSICS, 2009, 105 (03)
[7]   Radiative lifetime of a single electron-hole pair in GaN/AlN quantum dots [J].
Bretagnon, T ;
Lefebvre, P ;
Valvin, P ;
Bardoux, R ;
Guillet, T ;
Taliercio, T ;
Gil, B ;
Grandjean, N ;
Semond, F ;
Damilano, B ;
Dussaigne, A ;
Massies, J .
PHYSICAL REVIEW B, 2006, 73 (11)
[8]   Optical characteristics of hexagonal GaN self-assembled quantum dots: Strong influence of built-in electric field and carrier localization [J].
Cho, YH ;
Kwon, BJ ;
Barjon, J ;
Brault, J ;
Daudin, B ;
Mariette, H ;
Dang, LS .
APPLIED PHYSICS LETTERS, 2002, 81 (26) :4934-4936
[9]   From visible to white light emission by GaN quantum dots on Si(111) substrate [J].
Damilano, B ;
Grandjean, N ;
Semond, F ;
Massies, J ;
Leroux, M .
APPLIED PHYSICS LETTERS, 1999, 75 (07) :962-964
[10]   Formation of GaN quantum dots by molecular beam epitaxy using NH3 as nitrogen source [J].
Damilano, B. ;
Brault, J. ;
Massies, J. .
JOURNAL OF APPLIED PHYSICS, 2015, 118 (02)
1234