Photoemission electron microscopy study of anthracene growth on Si(111)

被引:20
作者
Buckanie, Niemma Mohamadie
Heringdorf, Frank-Joachim Meyer zu
机构
[1] Univ Duisburg Gesamthsch, FB Phys, D-47057 Duisburg, Germany
[2] Univ Duisburg Gesamthsch, Ctr Nanointegrat, D-47057 Duisburg, Germany
关键词
anthracene; PEEM; OMBE; thin film growth; OLED; OTFT; pentacene; deposition;
D O I
10.1016/j.susc.2007.01.045
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The thin film growth of anthracene films on Si(111) surfaces is studied by photoemission electron microscopy (PEEM). The thin film growth of anthracene on Si(111) is similar to the growth of pentacene on silicon. Initially a layer of flat lying molecules chemisorbs on the surface. Subsequent growth of fractal islands with standing up molecules proceeds on top of this flat layer. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:1701 / 1704
页数:4
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