Anodic oxidation of ion-doped silicon and properties of Si/SiO2 structures

被引：0

作者：

Safarov, AS ^{[1
]}

机构：

[1] Beruni State Tech Univ, Tashkent, Uzbekistan

来源：

INORGANIC MATERIALS | 1997年 / 33卷 / 12期

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Anodic oxidation of ion-doped silicon was studied. The density of surface states was found to correlate with contact voltage. The anodization rate was established to increase starting at. similar to 0.4-mu m depth.

引用

页码：1210 / 1212

页数：3