Influence of Temperature And Light Intensity on Ru(II) Complex Based Organic-Inorganic Device

被引：0
|
作者：
Asubay, Sezai [1 ]
Durap, Feyyaz [2 ]
Aydemir, Murat [2 ]
Ocak, Yusuf Selim [3 ]
Tombak, Ahmet [4 ]
Baysal, Akin [2 ]
机构：
[1] Dicle Univ, Fac Sci, Dept Phys, TR-21280 Diyarbakir, Turkey
[2] Dicle Univ, Fac Sci, Dept Chem, TR-21280 Diyarbakir, Turkey
[3] Dicle Univ, Fac Educ, Dept Sci, TR-21280 Diyarbakir, Turkey
[4] Batman Univ, Fac Sci, Dept Phys, Batman, Turkey
来源：
9TH INTERNATIONAL PHYSICS CONFERENCE OF THE BALKAN PHYSICAL UNION (BPU-9) | 2016年 / 1722卷
关键词：
PHOTOVOLTAIC PROPERTIES; HETEROJUNCTIONS; JUNCTION;
D O I：
10.1063/1.4944304
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An organic-inorganic junction was fabricated by forming [Ru(Cy2PNHCH2-C4H3O)(eta(6)-p-cymene)Cl-2] complex thin film using spin coating technique on n-Si and evaporating Au metal on the film. It was seen that the structure had perfect rectification property. Current-voltage (I-V) measurements were carried out in dark and under various illumination conditions (between 50-100 mW/cm(2)) and with the temperature range from 303 to 380 K. The structure showed unusually forward and reverse bias temperature and light sensing behaviors. It was seen that the current both in forward and reverse bias increased with the increase in light intensity and temperature.
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页数：4
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