Amorphous silicon thin-film: Behaviour of light-induced degradation

被引:31
作者
Hussin, M. Z. [1 ]
Shaari, S. [2 ]
Omar, A. M. [1 ]
Zain, Z. M. [1 ]
机构
[1] Univ Teknol MARA, Fac Elect Engn, Green Energy Res Ctr, Shah Alam 40450, Selangor, Malaysia
[2] Univ Teknol MARA, Fac Sci Appl, Shah Alam 40450, Selangor, Malaysia
关键词
amorphous-Silicon (a-Si); Photovoltaic (PV); Thin-film (TF); Light-induced degradation (LID); Stabilization process; LONG-TERM PERFORMANCE; PHOTOVOLTAIC SYSTEMS; TECHNICAL EVALUATION; OUTDOOR PERFORMANCE; MODULES; STABILITY;
D O I
10.1016/j.rser.2014.10.093
中图分类号
X [环境科学、安全科学];
学科分类号
08 ; 0830 ;
摘要
This paper aims to investigate and emphasize the importance of the grid-connected PV system regarding with the complex nature of thin-film PV technology behaviours. The investigation was critically reviewed the literature on the potential problems associated with the responses of metastable behaviour and developed a new technique in determining the stabilization period under outdoor exposure. According to the literature survey, the importance issues such as the performance and reliability of the thin-film PV technology using grid-connected systems have fairly good performance, although the amount rate as well as process of stabilization period of light-induced degradation (LID) generally depended on the type of thin-film PV technology chosen. This study will lead to the identification of light-induced degradation mechanisms by viewing and summarizing the potential impact on this behaviour, which makes it difficult to obtain reliable and robust for PV system applications. (C) 2014 Elsevier Ltd. All rights reserved.
引用
收藏
页码:388 / 402
页数:15
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