AFM study of ridges in few-layer epitaxial graphene grown on the carbon-face of 4H-SiC(000(1)over-bar)

被引：76
作者：
Prakash, Gyan [1 ,2 ]
Capano, Michael A. [2 ,3 ]
Bolen, Michael L. [2 ,3 ]
Zemlyanou, Dmitry [2 ]
Reifenberger, Ronald G. [1 ,2 ]
机构：
[1] Purdue Univ, Dept Phys, W Lafayette, IN 47907 USA
[2] Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
[3] Purdue Univ, Sch Elect Engn, W Lafayette, IN 47907 USA
来源：
CARBON | 2010年 / 48卷 / 09期
关键词：
THERMAL-EXPANSION; GRAPHITE; GRAPHITIZATION; 6H-SIC(0001); TEMPERATURE; MEMBRANES; DYNAMICS; PHASE;
D O I：
10.1016/j.carbon.2010.02.026
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
A characterization of the graphitic overlayer that forms on 4H-SiC(000 (1) over bar) substrates heated for ten minutes to temperatures T > 1350 degrees C under vacuum conditions has been performed. X-ray photoelectron spectroscopy of the C-face reveals the presence of graphitic carbon with a thickness that increases with growth temperature. Parallel atomic force microscope (AFM) studies find a mesh-like network of ridges with high curvature that bound atomically flat, tile-like facets of few-layer graphene (FLG). By imaging the network that develops on FLG, it is possible to map out the regions where the elastic energy is concentrated. (C) 2010 Elsevier Ltd. All rights reserved.
引用
收藏
页码：2383 / 2393
页数：11
相关论文
共 59 条
  • [1] Graphitization of the 6H-SiC(0001) surface studied by HREELS
    Angot, T
    Portail, M
    Forbeaux, I
    Layet, JM
    [J]. SURFACE SCIENCE, 2002, 502 : 81 - 85
  • [2] TOPOGRAPHICAL CHANGES INDUCED BY HIGH-DOSE CARBON-BOMBARDMENT OF GRAPHITE
    ANNIS, BK
    PEDRAZA, DF
    WITHROW, SP
    [J]. JOURNAL OF MATERIALS RESEARCH, 1993, 8 (10) : 2587 - 2599
  • [3] Electronic confinement and coherence in patterned epitaxial graphene
    Berger, Claire
    Song, Zhimin
    Li, Xuebin
    Wu, Xiaosong
    Brown, Nate
    Naud, Cecile
    Mayou, Didier
    Li, Tianbo
    Hass, Joanna
    Marchenkov, Atexei N.
    Conrad, Edward H.
    First, Phillip N.
    de Heer, Wait A.
    [J]. SCIENCE, 2006, 312 (5777) : 1191 - 1196
  • [4] Insights into few-layer epitaxial graphene growth on 4H-SiC(000(1)over-bar substrates from STM studies
    Biedermann, Laura B.
    Bolen, Michael L.
    Capano, Michael A.
    Zemlyanov, Dmitry
    Reifenberger, Ronald G.
    [J]. PHYSICAL REVIEW B, 2009, 79 (12):
  • [5] How soft skin wrinkles
    Brochard-Wyart, F
    de Gennes, PG
    [J]. SCIENCE, 2003, 300 (5618) : 441 - 441
  • [6] The electronic properties of graphene
    Castro Neto, A. H.
    Guinea, F.
    Peres, N. M. R.
    Novoselov, K. S.
    Geim, A. K.
    [J]. REVIEWS OF MODERN PHYSICS, 2009, 81 (01) : 109 - 162
  • [7] Thin films - Wrinkling of an elastic sheet under tension
    Cerda, E
    Ravi-Chandar, K
    Mahadevan, L
    [J]. NATURE, 2002, 419 (6907) : 579 - 580
  • [8] Cerda E., 2003, PHYS REV LETT, V90, P4
  • [9] Graphene nano-ribbon electronics
    Chen, Zhihong
    Lin, Yu-Ming
    Rooks, Michael J.
    Avouris, Phaedon
    [J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2007, 40 (02) : 228 - 232
  • [10] Nanocrystal superlattices
    Collier, CP
    Vossmeyer, T
    Heath, JR
    [J]. ANNUAL REVIEW OF PHYSICAL CHEMISTRY, 1998, 49 : 371 - 404
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