The role of an SiC interlayer at a graphite-silicon liquid interface in the solution growth of SiC crystals

被引：13

作者：

Lee, Ji Eun ^{[1
,2
]}

Kim, Byeong Geun ^{[1
]}

Yoon, Ji-Young ^{[1
,3
]}

Ha, Minh-Tan ^{[1
,4
]}

Lee, Myung-Hyun ^{[1
]}

Kim, Younghee ^{[1
]}

Seo, Won-Seon ^{[1
]}

Choi, Heon-Jin ^{[2
]}

Lee, Won-Jae ^{[5
]}

Jeong, Seong-Min ^{[1
]}

机构：

[1] Korea Inst Ceram Engn & Technol, Div Energy & Environm, Jinju 52851, South Korea

[2] Yonsei Univ, Dept Mat Sci & Engn, Seoul 03722, South Korea

[3] Yonsei Univ, Dept Chem Engn, Seoul 03722, South Korea

[4] Gyeongsang Natl Univ, Dept Ceram Engn, Jinju 52828, South Korea

[5] Dong Eui Univ, Dept Mat & Component Engn, Busan 47340, South Korea

来源：

CERAMICS INTERNATIONAL | 2016年 / 42卷 / 10期

关键词：

SiC; Crystal growth; Interlayer; TSSG; Solution growth; CHEMICAL-VAPOR-DEPOSITION; BULK GROWTH; TERNARY SOLUTION; CARBIDE; CARBON; POWER; MORPHOLOGY; TETRAMETHYLSILANE; SOLUBILITY; EFFICIENCY;

D O I：

10.1016/j.ceramint.2016.04.060

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

SiC crystal growth using the top seeded solution growth (TSSG) method involves the precipitation of solid SiC from carbon that is dissolved in a silicon melt. The growth rate of SiC is strongly influenced by the solubility of C in liquid Si, which is quite low. In this study, the dissolution of C from graphite to the Si melt was explored by observing the formation of an SiC interlayer at a graphite - Si liquid interface. The SiC interlayer was observed to become thickened during the several hours needed to reach a certain thickness at 1500 degrees C. Assuming that the SiC interlayer is a direct C source, a pre-formed SiC layer was coated on the graphite crucible to evaluate its effect on the concentration of C in the Si melt. As a result, the concentration of C in the Si melt increased within a short time, especially at low temperatures. By applying the SiC coated crucible to the TSSG process for SiC crystal growth, we confirmed that the development of a pre-formed SiC layer enhanced the growth rate of SiC crystals, especially at the initial stage of crystal growth at low temperatures. (C) 2016 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

引用

页码：11611 / 11618

页数：8

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