Chemical bath deposited zinc sulfide buffer layers for copper indium gallium sulfur-selenide solar cells and device analysis

被引：32

作者：

Kundu, S ^{[1
]}

Olsen, LC ^{[1
]}

机构：

[1] Pacific NW Natl Lab, Phys Vapor Deposit Grp, Richland, WA 99352 USA

来源：

THIN SOLID FILMS | 2005年 / 471卷 / 1-2期

关键词：

solar cells; X-ray photoelectron spectroscopy; ZnS; quantum efficiency;

D O I：

10.1016/j.tsf.2004.05.127

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Cadmium-five copper indium gallium sulfur-selenide (CIGSS) thin film solar cells have been fabricated using chemical bath deposited (CBD) zinc sulfide (ZnS) buffer layers. Shell Solar Industries provided high quality CIGSS absorber layers. The use of CBD-ZnS, which is a higher band gap material than CdS, improved the quantum efficiency of fabricated cells at lower wavelengths, leading to an increase in short circuit current. The best cell to date yielded an active area (0.43 cm(2)) efficiency of 13.3%. The effect of the ZnS buffer layer thickness on device performance was studied carefully. This paper also presents a discussion of issues relevant to the use of the CBD-ZnS buffer material for improving device performance. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：298 / 303

页数：6