Compressive strain-induced metal-insulator transition in orthorhombic SrIrO3 thin films

Orthorhombic SrIrO3 is a correlated metal whose electronic properties are highly susceptible to external perturbations due to the comparable interactions of spin-orbit interaction and electronic correlation. We have investigated the electronic properties of epitaxial orthorhombic SrIrO3 thin-films under compressive strain using transport measurements, optical absorption spectra, and magnetoresistance. The metastable, orthorhombic SrIrO3 thin-films are synthesized on various substrates using an epi-stabilization technique. We have observed that as in-plane lattice compression is increased, the dc-resistivity (rho) of the thin films increases by a few orders of magnitude, and the d rho/dT changes from positive to negative values. However, optical absorption spectra show Drude-like, metallic responses without an optical gap opening for all compressively strained thin films. Transport measurements under magnetic fields show negative magnetoresistance at low temperature for compressively strained thin-films. Our results suggest that weak localization is responsible for the strain-induced metal-insulator transition for the orthorhombic SrIrO3 thin-films.