16 x 4 Linear Solar-Blind UV Photoconductive Detector Array Based on β-Ga2O3 Film

In this article, a 16 x 4 linear array of beta-Ga2O3-based metal-semiconductor-metal structured photodetector is described for solar-blind sensing operation at a wavelength of 254 nm. The beta-Ga2O3 film is grown by using metal-organic chemical vapor deposition (MOCVD) equipment, and the photodetectors are finished in constructing with standard photolithography and ion beam sputtering procedures. The results show that the dark current (Idark), photo-to-dark current ratio (PDCR), photo responsivity (R), specific detectivity (D*), exterl quantum efficiency (EQE), and linear dynamic region (LDR) are 1.94 pA, 2.95x 107, 139.56 A/W, 2.55 x10(15) Jones, 6.8x 104%, and 149.4 dB, at 10 V bias and 2000 mu W/cm(2) light intensity illumination. In addition, the standard deviation of R for this photodetector array is 10%. Overall, such a 16 x 4 linear array of beta-Ga2O3-based photodetectorarraymakes a progressin the field of Ga2O3 photodetectors.