Epitaxial growth, electrical and optical properties of a-plane InN on r-plane sapphire

被引：18

作者：

Ajagunna, A. O. ^{[1
,2
]}

Iliopoulos, E. ^{[1
,2
]}

Tsiakatouras, G. ^{[1
,2
]}

Tsagaraki, K. ^{[1
,2
]}

Androulidaki, M. ^{[1
,2
]}

Georgakilas, A. ^{[1
,2
]}

机构：

[1] FORTH, IESL, Microelect Res Grp, Iraklion 71110, Greece

[2] Univ Crete, Dept Phys, Iraklion 71003, Greece

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 107卷 / 02期

关键词：

electron density; electron mobility; Hall effect; III-V semiconductors; indium compounds; molecular beam epitaxial growth; nucleation; photoluminescence; plasma materials processing; semiconductor growth; semiconductor thin films; wide band gap semiconductors; X-ray diffraction; OPTIMIZATION; BUFFER;

D O I：

10.1063/1.3284086

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The heteroepitaxy of a-plane (1120) InN films on r-plane (1102) sapphire substrates, by nitrogen radio frequency plasma-assisted molecular beam epitaxy, has been investigated and compared to that of c-plane (0001) InN. The epitaxial growth of a-plane InN proceeded through the nucleation, growth, and coalescence of three-dimensional islands, resulting in surface roughness that increased monotonically with epilayer thickness. The full width at half maximum of (1120) x-ray diffraction rocking curves decreased significantly with increasing InN thickness, characteristic of structural improvement, and it reached the value of 24 arcmin for a 1 mu m thick film. Hall-effect measurements exhibited a similar dependence of electron concentration and mobility on thickness for both the a- and c-plane InN films. The analysis of the Hall-effect measurements, by considering the contribution of two conducting layers, indicates a similar accumulation of low mobility electrons with N-s>10(14) cm(-2) at the films' surface/interfacial region for both the a- and c-plane InN films. From optical transmittance measurements, the absorption edge of 0.768 eV was determined for the 1 mu m a-plane film, consistent with the expected Burstein-Moss effect. Photoluminescence spectra exhibited a lower energy peak at 0.631 eV, suggesting defect-related transitions.

引用

页数：7

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