Very-low-threshold 2.4-μm GaInAsSb-AlGaAsSb laser diodes operating at room temperature in the continuous-wave regime

被引：30

作者：

Salhi, A ^{[1
]}

Rouillard, Y ^{[1
]}

Angellier, J ^{[1
]}

Garcia, M ^{[1
]}

机构：

[1] Univ Montpellier 2, F-34095 Montpellier, France

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2004年 / 16卷 / 11期

关键词：

GaInASsh-AlGaAsSb; quantum-well (QW) lasers; semiconductor lasers;

D O I：

10.1109/LPT.2004.835623

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A GaInAsSb-AlGaAsSb large optical cavity triple-quantum-well structure was grown by molecular-beam epitaxy. Shallow mesa ridge-waveguide lasers with stripe width of 100 mum were fabricated and tested. An internal losses coefficient as low as 4 cm(-1) and a high internal quantum efficiency of 70% were obtained. In the pulsed regime at room temperature, the extrapolated threshold current densities for infinite cavity length is 78 A/cm(2). The threshold current density per quantum well is as low as 34 A/cm(2) for a 3-mm-long cavity.

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页码：2424 / 2426

页数：3

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