Strain modulated quantum spin Hall effect in monolayer NiB

被引:8
作者
Yu, Qiaolin [1 ]
Fang, Yimei [1 ]
Cao, Xinrui [1 ,2 ]
Wu, Shunqing [1 ]
Zhu, Zi-zhong [1 ,2 ]
机构
[1] Xiamen Univ, Jiujiang Res Inst, Dept Phys, Dept Educ Fujian Prov,OSED,Key Lab Low Dimens Con, Xiamen 361005, Peoples R China
[2] Fujian Prov Key Lab Theoret & Computat Chem, Xiamen 361005, Peoples R China
基金
中国国家自然科学基金;
关键词
EVOLUTION; GRAPHENE; PHASE; WANNIER90; BORIDE; STATE; TOOL; GAS;
D O I
10.1063/5.0048423
中图分类号
O59 [应用物理学];
学科分类号
摘要
Since boron has diverse coordination chemistry, it is capable of bonding with transition metals to form a new family of two-dimensional (2D) transition metal borides (MBenes) that exhibit rich electronic properties. Here, we propose a 2D planar monolayer NiB with topologically nontrivial electronic structures as the new member of the MBenes family. The NiB monolayer exhibits metallic behavior with two Dirac cones residing slightly below the Fermi level in the absence of spin-orbit coupling (SOC). When a tensile strain of 11% is applied, the NiB monolayer transforms into a semimetal. A gap opening of 18 meV is observed at the Dirac points when SOC is considered. Based on the results of Z(2) invariant (Z(2) = 1) and the helical edge states, we identify the pristine NiB as a topological metal, while the stretched monolayer under 11% strain as a quantum spin Hall (QSH) insulator. In addition, the NiB monolayer undergoes a phase transition from topological metal to QSH insulator and then to topological metal with the increase in strain from 0% to 14%. Our findings demonstrate that the electronic properties of NiB, the new member of the MBene family, can be modulated by strain. Published under an exclusive license by AIP Publishing.
引用
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页数:6
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