What is the dopant concentration in polycrystalline thin-film Cu(In,Ga)Se2?

被引：22

作者：

Werner, F. ^{[1
]}

Bertram, T. ^{[1
]}

Mengozzi, J. ^{[1
]}

Siebentritt, S. ^{[1
]}

机构：

[1] Univ Luxembourg, Lab Photovolta, Rue Brill 41, L-4422 Belvaux, Luxembourg

来源：

THIN SOLID FILMS | 2017年 / 633卷

关键词：

Dopant concentration; Chalcopyrite; Capacitance-voltage; Hall; Polycrystalline; SOLAR-CELLS; CUINSE2; CDS;

D O I：

10.1016/j.tsf.2016.09.038

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We compare the dopant concentration of polycrystalline Cu(ln,Ga)Se-2 thin film absorbers derived from Hall and capacitance-voltage measurements. Although both measurements techniques appear to be reliable, dopant concentrations determined by capacitance-voltage analysis are significantly lower and vary with probing depth into the absorber. The doping profiles and differences between both measurement techniques are consistent with Cd in-diffusion from the CdS buffer layer during solar cell fabrication. Different doping profiles obtained after a variation of the CdS deposition process support this scenario. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：222 / 226

页数：5

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