What is the dopant concentration in polycrystalline thin-film Cu(In,Ga)Se2?

被引：22
|
作者：
Werner, F. [1 ]
Bertram, T. [1 ]
Mengozzi, J. [1 ]
Siebentritt, S. [1 ]
机构：
[1] Univ Luxembourg, Lab Photovolta, Rue Brill 41, L-4422 Belvaux, Luxembourg
来源：
THIN SOLID FILMS | 2017年 / 633卷
关键词：
Dopant concentration; Chalcopyrite; Capacitance-voltage; Hall; Polycrystalline; SOLAR-CELLS; CUINSE2; CDS;
D O I：
10.1016/j.tsf.2016.09.038
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We compare the dopant concentration of polycrystalline Cu(ln,Ga)Se-2 thin film absorbers derived from Hall and capacitance-voltage measurements. Although both measurements techniques appear to be reliable, dopant concentrations determined by capacitance-voltage analysis are significantly lower and vary with probing depth into the absorber. The doping profiles and differences between both measurement techniques are consistent with Cd in-diffusion from the CdS buffer layer during solar cell fabrication. Different doping profiles obtained after a variation of the CdS deposition process support this scenario. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码：222 / 226
页数：5
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