1.37 kV/12 A NiO/β-Ga2O3 Heterojunction Diode With Nanosecond Reverse Recovery and Rugged Surge-Current Capability

被引：111

作者：

Gong, Hehe ^{[1
]}

Zhou, Feng ^{[1
]}

Xu, Weizong ^{[1
]}

Yu, Xinxin ^{[1
]}

Xu, Yang ^{[1
]}

Yang, Yi ^{[1
]}

Ren, Fang-fang ^{[1
]}

Gu, Shulin ^{[1
]}

Zheng, Youdou ^{[1
]}

Zhang, Rong ^{[1
]}

Lu, Hai ^{[1
]}

Ye, Jiandong ^{[1
]}

机构：

[1] Nanjing Univ, Sch Elect Sci & Engn, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210023, Peoples R China

来源：

IEEE TRANSACTIONS ON POWER ELECTRONICS | 2021年 / 36卷 / 11期

关键词：

Fast reverse recovery; Gallium oxide (Ga2O3); NiO; p-n heterojunction diode (HJD); surge current;

D O I：

10.1109/TPEL.2021.3082640

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ga2O3 power diodes with high voltage/current ratings, superior dynamic performance, robust reliability, and potentially easy-to-implement are a vital milestone on the Ga2O3 power electronics roadmap. In this letter, a better tradeoff between fast reverse-recovery and rugged surge-current capability has been demonstrated in NiO/Ga2O3 p-n heterojunction diodes (HJDs). With the double-layered p-NiO design, the HJD exhibits superior electrostatic performances, including a high breakdown voltage of 1.37 kV, a forward current of 12.0 A with a low on-state resistance of 0.26 Omega, yielding a static Baliga's figure of merit (FOM) of 0.72 GW/cm(2). Meanwhile, the fast switching performance has been observed with a short reverse recovery time in nanosecond timescale (11 ns) under extreme switching conditions of di/dt up to 500 A/mu s. In particular, for a 9-mm(2) HJD, a large surge current of 45 A has also been obtained in a 10-ms surge transient, thanks to the conductivity modulation effect. These results are comparable with those of the advanced commercial SiC SBDs and have significantly outperformed the past reported Ga2O3 HJDs, fulfilling the enormous potential of Ga2O3 in power applications.

引用

页码：12213 / 12217

页数：5

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