Picosecond ultrasonics study of the modification of interfacial bonding by ion implantation

被引：77
作者：
Tas, G [1 ]
Loomis, JJ
Maris, HJ
Bailes, AA
Seiberling, LE
机构：
[1] Brown Univ, Dept Phys, Providence, RI 02912 USA
[2] Univ Florida, Dept Phys, Gainesville, FL 32611 USA
来源：
APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 18期
关键词：
D O I：
10.1063/1.121276
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on experiments in which picosecond ultrasonic techniques are used to investigate the modification of interfacial bonding that results from ion implantation. The bonding is studied through measurements of the acoustic reflection coefficient at the interface. This method is nondestructive and can be used to create a map of the variation of the bonding over the area of the interface. (C) 1998 American Institute of Physics.
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页码：2235 / 2237
页数：3
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