High-power GaN Diode Pumped Q-switch Pr3+-doped LiYF4 Laser

被引：0

作者：

Kojou, Junichiro ^{[1
]}

Watanbe, Yojiro ^{[1
]}

Kannari, Fumihiko ^{[1
]}

机构：

[1] Keio Univ, Fac Sci & Technol, Dept Elect & Elect Engn, Kohoku Ku, Yokohama, Kanagawa 2238522, Japan

来源：

2009 LASERS & ELECTRO-OPTICS & THE PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, VOLS 1 AND 2 | 2009年

关键词：

Pr LiYF4; GaN LD; AO-Q Switch; LIGHT;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A Q-switch Pr.LIYF(4) laser at 639 nm pumped by a high-power GaN laser diode is demonstrated The highest laser peak power of 4 8 W with a pulscwidth of 270 ns is obtained at 7 7 kHz

引用

页码：649 / 650

页数：2