High-power GaN Diode Pumped Q-switch Pr3+-doped LiYF4 Laser

被引:0
作者
Kojou, Junichiro [1 ]
Watanbe, Yojiro [1 ]
Kannari, Fumihiko [1 ]
机构
[1] Keio Univ, Fac Sci & Technol, Dept Elect & Elect Engn, Kohoku Ku, Yokohama, Kanagawa 2238522, Japan
来源
2009 LASERS & ELECTRO-OPTICS & THE PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, VOLS 1 AND 2 | 2009年
关键词
Pr LiYF4; GaN LD; AO-Q Switch; LIGHT;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A Q-switch Pr.LIYF(4) laser at 639 nm pumped by a high-power GaN laser diode is demonstrated The highest laser peak power of 4 8 W with a pulscwidth of 270 ns is obtained at 7 7 kHz
引用
收藏
页码:649 / 650
页数:2
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