Application of the Tris(acetylacetonato)iron(III)/(II) Redox Couple in p-Type Dye-Sensitized Solar Cells

被引:179
作者
Perera, Ishanie Rangeeka [1 ]
Daeneke, Torben [2 ]
Makuta, Satoshi [5 ]
Yu, Ze [3 ]
Tachibana, Yasuhiro [5 ,6 ]
Mishra, Amaresh [7 ]
Baeuerle, Peter [7 ]
Ohlin, C. Andre [1 ]
Bach, Udo [2 ,3 ,4 ]
Spiccia, Leone [1 ]
机构
[1] Monash Univ, Sch Chem, Clayton, Vic 3800, Australia
[2] CSIRO Future Mfg Flagship, CSIRO Mat Sci & Engn, Clayton, Vic 3169, Australia
[3] Monash Univ, Dept Mat Engn, Fac Engn, Clayton, Vic 3800, Australia
[4] Melbourne Ctr Nanofabricat, Clayton, Vic 3168, Australia
[5] RMIT Univ, Sch Aerosp Mech & Mfg Engn, Bundoora, Vic 3083, Australia
[6] Japan Sci & Technol Agcy JST, PRESTO, Kawaguchi, Saitama 3320012, Japan
[7] Univ Ulm, Inst Organ Chem & Adv Mat 2, D-89081 Ulm, Germany
基金
澳大利亚研究理事会;
关键词
dye-sensitized solar cells; energy conversion; iron; redox chemistry; semiconductors; OPEN-CIRCUIT VOLTAGE; BLOCKING LAYERS; ELECTROLYTES; EFFICIENCY; OXIDE; COMPLEXES;
D O I
10.1002/anie.201409877
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
An electrolyte based on the tris(acetylacetonato)iron( III)/(II) redox couple ([Fe(acac)(3)](0/1)) was developed for p-type dye-sensitized solar cells (DSSCs). Introduction of a NiO blocking layer on the working electrode and the use of chenodeoxycholic acid in the electrolyte enhanced device performance by improving the photocurrent. Devices containing [Fe(acac)(3)](0/1-) and a perylene-thiophene-triphenylamine sensitizer (PMI-6T-TPA) have the highest reported short-circuit current (J(SC)=7.65 mA cm(-2)), and energy conversion efficiency (2.51%) for p-type DSSCs coupled with a fill factor of 0.51 and an open-circuit voltage V-OC=645 mV. Measurement of the kinetics of dye regeneration by the redox mediator revealed that the process is diffusion limited as the dye-regeneration rate constant (1.7 x 10(8) M-1 S-1) is very close to the maximum theoretical rate constant of 3.3 x 10(8) M-1 S-1. Consequently, a very high dye-regeneration yield (>99%) could be calculated for these devices.
引用
收藏
页码:3758 / 3762
页数:5
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