Kinetical study of the nonstoichiometric vapour growth process in the system ZnSe:I2

被引：1
作者：
Stanculescu, A. [1 ]
机构：
[1] Natl Inst Mat Phys, Bucharest 077125, Romania
来源：
CRYSTAL RESEARCH AND TECHNOLOGY | 2010年 / 45卷 / 08期
关键词：
vapour growth; ZnSe; stoichiometry; SINGLE-CRYSTALS; CHEMICAL-TRANSPORT; CHEMISCHE TRANSPORTREAKTIONEN; CVT; EQUILIBRIUM; ZNS;
D O I：
10.1002/crat.201000059
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We have studied the growth of ZnSe crystals by chemical transport in a closed system in nonstoichiometric conditions, and we have deduced that the interface kinetics is the phenomenon limiting the growth process. The effect on the growth process of the deviation from stoichiometry of the II-VI compound was investigated using a mathematical model that involves indirect data computed from directly obtained experimental values. The experimental crystallization rate was compared with the maximum value of the transport flux calculated using the Arizumi-Nishinaga model. The influence of the stoichiometry of the source material and of the variations in the growth parameters (supercooling, geometrical dimension, specific loading of the ampoule and iodine concentration) on the ZnSe crystal growth process has also been studied. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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页码：791 / 799
页数：9
相关论文
共 38 条
[1]  
[Anonymous], 1954, MOL THEORY GASES LIQ, DOI DOI 10.1017/S0368393100117833
[2]   TRANSPORT REACTION IN CLOSED TUBE PROCESS [J].
ARIZUMI, T ;
NISHINAGA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1965, 4 (03) :165-+
[3]   THERMODYNAMICAL CONSIDERATION FOR PREPARATION OF GAAS-GE HETEROJUNCTIONS THROUGH CLOSED TUBE PROCESS [J].
ARIZUMI, T ;
NISHINAGA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1966, 5 (01) :21-+
[4]   THERMODYNAMICS OF VAPOR GROWTH OF ZNSE-GE-I2 SYSTEM IN CLOSED TUBE PROCESS [J].
ARIZUMI, T ;
NISHINAGA, T ;
KAKEHI, M .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1966, 5 (07) :588-+
[5]   PRODUCTIVITY FUNCTION FOR MULTIREACTIONAL CVT AND ITS APPLICATION TO IODINE TRANSPORT OF CADMIUM-SULFIDE [J].
ATTOLINI, G ;
PAORICI, C ;
ZECCHINA, L .
JOURNAL OF CRYSTAL GROWTH, 1990, 99 (1-4) :731-736
[6]   Thermal conductivity of ZnSe by molecular dynamics simulation [J].
Balasubramanian, AK ;
Sankar, N ;
Ramakrishnan, SK ;
Ramachandran, K .
CRYSTAL RESEARCH AND TECHNOLOGY, 2004, 39 (06) :558-563
[7]   Computational study on the CVT of the ZnSe-I2 material system [J].
Böttcher, K ;
Hartmann, H ;
Siche, D .
JOURNAL OF CRYSTAL GROWTH, 2001, 224 (3-4) :195-203
[8]  
BOTTCHER K, 1997, ADV COMPUTATIONAL EN, P226
[9]   THE GROWTH OF CRYSTALS AND THE EQUILIBRIUM STRUCTURE OF THEIR SURFACES [J].
BURTON, WK ;
CABRERA, N ;
FRANK, FC .
PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1951, 243 (866) :299-358
[10]  
Chapman S, 1951, Mathematical theory of nonuniform gases, Vsecond
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