Significant Improvement of GaN Crystal Quality with Ex-situ Sputtered AlN Nucleation Layers

被引：3

作者：

Chen, Shuo-Wei ^{[1
,2
]}

Yang, Young ^{[2
]}

Wen, Wei-Chih ^{[2
]}

Li, Heng ^{[1
]}

Lu, Tien-Chang ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Photon, 1001 Daxue Rd, Hsinchu 300, Taiwan

[2] Epistar Corp, 5 Lixing 5th Rd, Hsinchu 300, Taiwan

来源：

LIGHT-EMITTING DIODES: MATERIALS, DEVICES, AND APPLICATIONS FOR SOLID STATE LIGHTING XX | 2016年 / 9768卷

关键词：

light-emitting diodes (LEDs); AlN; internal quantum efficiency (IQE); multiple quantum wells (MQWs); sputter; EFFICIENCY; DISLOCATIONS; STRAIN;

D O I：

10.1117/12.2211721

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ex-situ sputtered AlN nucleation layer has been demonstrated effective to significantly improve crystal quality and electrical properties of GaN epitaxy layers for GaN based Light-emitting diodes (LEDs). In this report, we have successfully reduced X-ray (102) FWHM from 240 to 110 arcsec, and (002) FWHM from 230 to 101 arcsec. In addition, reverse-bias voltage (Vr) increased around 20% with the sputtered AlN nucleation layer. Furthermore, output power of LEDs grown on sputtered AlN nucleation layer can be improved around 4.0% compared with LEDs which is with conventional GaN nucleation layer on pattern sapphire substrate (PSS).

引用

页数：9

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