Influence of the deposition conditions on the properties of titanium oxide produced by r.f. magnetron sputtering

被引：14

作者：

Barquinha, P ^{[1
]}

Pereira, L ^{[1
]}

Aguas, H ^{[1
]}

Fortunato, E ^{[1
]}

Martins, R ^{[1
]}

机构：

[1] Univ Nova Lisboa, Fac Ciencias & Tecnol, Dept Ciencia Mat, CEMOP, P-2829516 Caparica, Portugal

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2004年 / 7卷 / 4-6期

关键词：

gate dielectrics; titanium oxide; sputtering;

D O I：

10.1016/j.mssp.2004.09.116

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work refers to the electro-optical and structural characteristics of titanium oxide (TiON) thin films produced by radio frequency (r.f.) magnetron sputtering that present promising performances for gate dielectric applications, alone or in mixed tandem structures, such as with AlyOz films, taking advantage of its high dielectric constant. Films produced with a O-2/Ar ratio between 0.1 and 0.15 present an improved stochiometry and density where the resistivity overcomes 10(11) Omegacm and the fixed charge density decreases below 10(12)cm(-2). The deposition pressure influences greatly the growth rate that seems to be a determinant factor dictating the films properties. (C) 2004 Elsevier Ltd. All rights reserved.

引用

页码：243 / 247

页数：5

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