Highly transparent conductive and near-infrared reflective ZnO:Al thin films

被引：104

作者：

Gong, Li ^{[1
]}

Ye, Zhizhen ^{[1
]}

Lu, Jianguo ^{[1
]}

Zhu, Liping ^{[1
]}

Huang, Jingyun ^{[1
]}

Gu, Xiuquan ^{[1
]}

Zhao, Binghui ^{[1
]}

机构：

[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

来源：

VACUUM | 2010年 / 84卷 / 07期

基金：

中国国家自然科学基金;

关键词：

Al-doped ZnO; PLD; Transparent conductive oxides; Near-IR reflective; PULSED-LASER DEPOSITION; AL FILMS; TEMPERATURE;

D O I：

10.1016/j.vacuum.2010.01.010

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Al-doped ZnO (AZO) thin films have been prepared on glass substrates by pulsed laser deposition. The structural, optical, and electrical properties were strongly dependent on the growth temperatures. The lowest resistivity of 4.5 x 10(-4) Omega cm was obtained at an optimized temperature of 350 degrees C. The AZO films deposited at 350 degrees C also had the high optical transmittance above 87% in the visible range and the low transmittance (<15% at 1500 nm) and high reflectance (similar to 50% at 2000 nm) in the near-IR region. The good IR-reflective properties of ZnO:Al films show that they are promising for near-IR reflecting mirrors and heat reflectors. (C) 2010 Elsevier Ltd. All rights reserved.

引用

页码：947 / 952

页数：6

共 15 条

[1] High temperature stability of postgrowth annealed transparent and conductive ZnO:Al films [J].

Bayraktaroglu, Burhan ;

Leedy, Kevin ;

Bedford, Robert .

APPLIED PHYSICS LETTERS, 2008, 93 (02)

[2] Properties of transparent conducting ZnO:Al oxide thin films and their application for molecular organic light-emitting diodes [J].

Cao, HT ;

Sun, C ;

Pei, ZL ;

Wang, AY ;

Wen, LS ;

Hong, RJ ;

Jiang, X .

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2004, 15 (03) :169-174

[3] The effect of deposition temperature on the properties of Al-doped zinc oxide thin films [J].

Chang, JF ;

Hon, MH .

THIN SOLID FILMS, 2001, 386 (01) :79-86

[4] INFLUENCE OF DISCHARGE PARAMETERS ON THE LAYER PROPERTIES OF REACTIVE MAGNETRON-SPUTTERED ZNO-AL FILMS [J].

ELLMER, K ;

KUDELLA, F ;

MIENTUS, R ;

SCHIECK, R ;

FIECHTER, S .

THIN SOLID FILMS, 1994, 247 (01) :15-23

[5]

Fowles G. R., 1989, Introduction to Modern Optics

[6] Highly transparent and conductive Zn0.85Mg0.15O:Al thin films prepared by pulsed laser deposition [J].

Gu, Xiuquan ;

Zhu, Liping ;

Ye, Zhizhen ;

Ma, Quanbao ;

He, Haiping ;

Zhang, Yinzhu ;

Zhao, Binghui .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2008, 92 (03) :343-347

[7]

Hao XT, 2002, SCI CHINA SER A, V45, P394

[8] Effect of rapid thermal annealing on electrical and optical properties of Ga doped ZnO thin films prepared at room temperature [J].

Kim, Jong Hoon ;

Du Ahn, Byung ;

Lee, Choong Hee ;

Jeon, Kyung Ah ;

Kang, Hong Seong ;

Lee, Sang Yeol .

JOURNAL OF APPLIED PHYSICS, 2006, 100 (11)

[9] Structural, optical, and electrical properties of (Zn,Al)O films over a wide range of compositions [J].

Lu, J. G. ;

Ye, Z. Z. ;

Zeng, Y. J. ;

Zhu, L. P. ;

Wang, L. ;

Yuan, J. ;

Zhao, B. H. ;

Liang, Q. L. .

JOURNAL OF APPLIED PHYSICS, 2006, 100 (07)

[10] Aluminium doped ZnO films: electrical, optical and photoresponse studies [J].

Mridha, S. ;

Basak, D. .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 40 (22) :6902-6907

← 1 2 →