Quantum statistical theory of the fermionic quantum Hall effect

被引:27
作者
Fujita, S [1 ]
Ito, K
Kumek, Y
Okamura, Y
机构
[1] SUNY Buffalo, Univ Buffalo, Buffalo, NY 14260 USA
[2] Ube Natl Coll Technol, Yamaguchi 7558555, Japan
[3] Natl Ctr Univ Entrance Examinat, Div Res, Meguro Ku, Tokyo 1538501, Japan
关键词
D O I
10.1103/PhysRevB.70.075304
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
At the even-denominator filling factor nu=P/Q, even Q, a fermionic Quantum Hall (QH) state is normally developed in a pure heterojunction GaAs/AlGaAs at the lowest temperatures. The QH state at nu=5/2 is an exception, and it is known to be bosonic. The fermionic state is formed by the composite (c-) fermions, each with an electron and Q flux quanta (fluxons). The conductivity sigma=J/E, J= current density, E= applied field, becomes a universal constant (e(2)/h)Q(-1) as the temperature approaches zero while the Hall conductivity sigma(H)=J/E-H, E-H=Hall field, becomes approximately equal to (e(2)/h)P/Q. The widths in the resistivity rho=sigma(-1) are symmetric with respect to high and low fields. They are temperature dependent. The resistivity (rho) curve smoothly approaches a constant as the field is lowered toward zero.
引用
收藏
页码:075304 / 1
页数:7
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