Growth model for atomic ordering: The case for quadruple-period ordering in GaAsSb alloys

被引：8

作者：

Batyrev, IG ^{[1
]}

Norman, AG ^{[1
]}

Zhang, SB ^{[1
]}

Wei, SH ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

PHYSICAL REVIEW LETTERS | 2003年 / 90卷 / 02期

关键词：

D O I：

10.1103/PhysRevLett.90.026102

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Quadruple-period ordering in GaAsSb alloys is studied both theoretically and experimentally. A growth model is proposed to account for the observed three-dimensional (3D) ordered structure. The model is qualitatively different from the widely accepted surface reconstruction and dimerization-induced ordering models that strictly speaking explain only the in-plane 2D patterns. Here, we show that the already ordered substrate will affect the reconstruction of the growth front with respect to the substrate to ensure a correct stacking of the individual 2D ordered layers into the observed 3D lattice.

引用

页数：4

共 29 条

[1] THEORY OF RECONSTRUCTION INDUCED SUBSURFACE STRAIN - APPLICATION TO SI(100) [J].