Causal self-energies for NEGF modelling of quantum nanowires

被引：6

作者：

Barker, J. ^{[1
]}

Martinez, A. ^{[2
]}

Aldegunde, M. ^{[2
]}

Valin, R. ^{[2
]}

机构：

[1] Univ Glasgow, Sch Engn, Glasgow G12 8LT, Lanark, Scotland

[2] Univ Swansea, Coll Engn, Swansea, W Glam, Wales

来源：

4TH WORKSHOP ON THEORY, MODELLING AND COMPUTATIONAL METHODS FOR SEMICONDUCTORS (TMCSIV) | 2014年 / 526卷

关键词：

D O I：

10.1088/1742-6596/526/1/012001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electron-phonon scattering is shown to increase dramatically at small nanowire cross-sections so that the transport is not ballistic. Non-ballistic dissipative device modelling requires the full complexity of the non-equilibrium Green Function (NEGF) method. The role of causality in obtaining spectral sum rule-conserving approximations to the electron-phonon self-energies is demonstrated and applications given for wrap-round gate silicon nanowire field effect transistors. Causality violations give erroneous density of states and current densities.

引用

页数：4

共 6 条

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