Virtual Metrology for Plasma Etch using Tool Variables

被引：31

作者：

Lynn, Shane ^{[1
]}

Ringwood, John ^{[1
]}

Ragnoli, Emanuele ^{[1
]}

McLoone, Sean ^{[1
]}

MacGearailt, Niall ^{[2
]}

机构：

[1] Natl Univ Ireland, Dept Elect Engn, Maynooth, Kildare, Ireland

[2] Dublin City Univ, Dublin Co, Dublin, Ireland

来源：

2009 IEEE/SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE | 2009年

关键词：

NEURAL NETWORKS; FAULT-DETECTION; STATISTICAL TECHNIQUES; OPTICAL-EMISSION;

D O I：

10.1109/ASMC.2009.5155972

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents work carried out with data from an industrial plasma etch process. Etch tool parameters, available during wafer processing time, are used to predict wafer etch rate. These parameters include variables such as power, pressure, temperature, and RF measurement. A number of variable selection techniques are examined, and a novel piecewise modelling effort is discussed. The achievable accuracy and complexity trade-offs of plasma etch modelling are discussed in detail.

引用

页码：143 / +

页数：2

共 19 条

[1]

Afifi A., 2003, COMPUTER AIDED MULTI

[2]

[Anonymous], 2007, MATH STAT DATA ANAL

[3]

Battiti R., 1990, INCC 90 PAR INT NEUR, V2, P757

[4]

Brace N., 2006, SPSS PSYCHOL

[5]

CERNY PA, 2001, ORSNZ C 2001

[6]

CHANG YJ, 2006, NEUR NETW 2006 IJCNN, P5289

[7] ON THE APPROXIMATE REALIZATION OF CONTINUOUS-MAPPINGS BY NEURAL NETWORKS [J].

FUNAHASHI, K .

NEURAL NETWORKS, 1989, 2 (03) :183-192

[8] ADVANTAGES OF PLASMA ETCH MODELING USING NEURAL NETWORKS OVER STATISTICAL TECHNIQUES [J].

HIMMEL, CD ;

MAY, GS .

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 1993, 6 (02) :103-111

[9] Neural-network-based sensor fusion of optical emission and mass spectroscopy data for real-time fault detection in reactive ion etching [J].

Hong, SJ ;

May, GS .

IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 2005, 52 (04) :1063-1072

[10] Partial diagnostic data to plasma etch modeling using neural network [J].

Kim, B ;

Kim, S .

MICROELECTRONIC ENGINEERING, 2004, 75 (04) :397-404

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