RF Performance and Avalanche Breakdown Analysis of InN Tunnel FETs

This paper reports radio frequency (RF) performance and channel breakdown analysis in an n-type tunneling field-effect transistor based on InN. The tunneling current is evaluated from the fundamental principles of quantum mechanical tunneling. We investigate the RF performance of the device. High transconductance of 2.18 mS/mu m and current gain cutoff frequency of 460 GHz makes the device suitable for terahertz applications. A significant reduction in gate-to-drain capacitance is observed under a relatively higher drain bias (V-ds = 1 V). Impact ionization coefficient in the channel is evaluated quantitatively considering semiclassical carrier transport and avalanche breakdown is found to be unlikely at V-ds = 1.0 V.