A High-efficiency 15-Watt GaN HEMT X-band MMIC Power Amplifier

被引:0
|
作者
Wu, Haifeng [1 ]
Wang, Cetian [1 ]
Lin, Qian [2 ]
Chen, Yijun [1 ]
Hu, Liulin [1 ]
Tong, Wei [1 ]
机构
[1] Chengdu Ganide Technol, Chengdu 610073, Peoples R China
[2] Qinghai Univ Nationalities, Coll Phys & Elect Informat Engineer, Xining 810007, Peoples R China
来源
2018 INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY (ICMMT2018) | 2018年
关键词
Broadband amplifiers; Gallium Nitride; GaN MMIC PA; X-band;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents the design and fabrication of high-efficiency GaN/AlGaN MMICs for X-band frequencies (8-12 GHz) on 6-inchs Si-SiC substrate. This three-stage MMIC PA is designed and realized in microstrip technology using reactive matching method. The measurement results of this PA achieves a PAE higher than 33% and an output power higher than 42 dBm in the CW-mode operation between 8 and 12 GHz. In the 10-12 GHz frequency range, the PA obtains a PAE higher than 37%, a corresponding output power of 16-22W, and an associated power gain of 17 dB. The total size of the chip is 7.5 mm(2).
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页数:3
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