Origin of Device Performance Enhancement of Junctionless Accumulation-Mode (JAM) Bulk FinFETs With High-κ Gate Spacers

被引：40

作者：

Choi, Ji Hun ^{[1
]}

Kim, Tae Kyun ^{[1
]}

Moon, Jung Min ^{[1
]}

Yoon, Young Gwang ^{[1
]}

Hwang, Byeong Woon ^{[1
]}

Kim, Dong Hyun ^{[1
]}

Lee, Seok-Hee ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Elect Engn, Taejon 305701, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2014年 / 35卷 / 12期

关键词：

Fringing field; high-kappa gate spacers; JAM FET; junctionless (JL) FET; TRANSISTOR;

D O I：

10.1109/LED.2014.2364093

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we investigated the junctionless accumulation-mode (JAM) bulk FinFETs with high-kappa gate spacers showing enhanced device performance in SS, DIBL, and ON/OFF current ratio. We found that origin of the ON-state current enhancement was reduction of the initial energy barrier between the source and channel, and reason for the OFF-state current reduction was L-G extension caused by the fringing field through high-kappa gate spacers. The OFF-state leakage current decreased by over one order of magnitude. The ON-state current was remarkably enhanced by 180% over that of low-kappa gate spacers. The high-kappa gate spacer is indispensable for enhancing the performance of the JAM field-effect transistor in a sub 20-nm -gate length regime.

引用

页码：1182 / 1184

页数：3

共 9 条

[1] [Anonymous], SENT DEV US GUID
[2] Impact of high-k spacer on device performance of a junctionless transistor
Baruah, Ratul Kumar
Paily, Roy P.
[J]. JOURNAL OF COMPUTATIONAL ELECTRONICS, 2013, 12 (01) : 14 - 19
[3] Junctionless Nanowire Transistor (JNT): Properties and design guidelines
Colinge, J. P.
Kranti, A.
Yan, R.
Lee, C. W.
Ferain, I.
Yu, R.
Akhavan, N. Dehdashti
Razavi, P.
[J]. SOLID-STATE ELECTRONICS, 2011, 65-66 : 33 - 37
[4] Colinge JP, 2010, NAT NANOTECHNOL, V5, P225, DOI [10.1038/nnano.2010.15, 10.1038/NNANO.2010.15]
[5] Enhanced Electrostatic Integrity of Short-Channel Junctionless Transistor With High-κ Spacers
Gundapaneni, Suresh
Ganguly, Swaroop
Kottantharayil, Anil
[J]. IEEE ELECTRON DEVICE LETTERS, 2011, 32 (10) : 1325 - 1327
[6] Klaassen D. B. M., 1990, International Electron Devices Meeting 1990. Technical Digest (Cat. No.90CH2865-4), P357, DOI 10.1109/IEDM.1990.237157
[7] Lee C.-W., 2010, P SSDM 10, P1044, DOI DOI 10.7567/SSDM.2010.C-9-5L
[8] Performance estimation of junctionless multigate transistors
Lee, Chi-Woo
Ferain, Isabelle
Afzalian, Aryan
Yan, Ran
Akhavan, Nima Delidashti
Razavi, Pedrarn
Colinge, Jean-Pierre
[J]. SOLID-STATE ELECTRONICS, 2010, 54 (02) : 97 - 103
[9] Junctionless multigate field-effect transistor
Lee, Chi-Woo
Afzalian, Aryan
Akhavan, Nima Dehdashti
Yan, Ran
Ferain, Isabelle
Colinge, Jean-Pierre
[J]. APPLIED PHYSICS LETTERS, 2009, 94 (05)

← 1 →