Origin of Device Performance Enhancement of Junctionless Accumulation-Mode (JAM) Bulk FinFETs With High-κ Gate Spacers

被引：41

作者：

Choi, Ji Hun ^{[1
]}

Kim, Tae Kyun ^{[1
]}

Moon, Jung Min ^{[1
]}

Yoon, Young Gwang ^{[1
]}

Hwang, Byeong Woon ^{[1
]}

Kim, Dong Hyun ^{[1
]}

Lee, Seok-Hee ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Elect Engn, Taejon 305701, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2014年 / 35卷 / 12期

关键词：

Fringing field; high-kappa gate spacers; JAM FET; junctionless (JL) FET; TRANSISTOR;

D O I：

10.1109/LED.2014.2364093

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we investigated the junctionless accumulation-mode (JAM) bulk FinFETs with high-kappa gate spacers showing enhanced device performance in SS, DIBL, and ON/OFF current ratio. We found that origin of the ON-state current enhancement was reduction of the initial energy barrier between the source and channel, and reason for the OFF-state current reduction was L-G extension caused by the fringing field through high-kappa gate spacers. The OFF-state leakage current decreased by over one order of magnitude. The ON-state current was remarkably enhanced by 180% over that of low-kappa gate spacers. The high-kappa gate spacer is indispensable for enhancing the performance of the JAM field-effect transistor in a sub 20-nm -gate length regime.

引用

页码：1182 / 1184

页数：3

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