Growth mechanism of β-SiC nanowires in SiC reticulated porous ceramics

被引：56

作者：

Yao, Xiumin ^{[1
]}

Tan, Shouhong ^{[1
]}

Huang, Zhengren ^{[1
]}

Dong, Shaoming ^{[1
]}

Jiang, Dongliang ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China

来源：

CERAMICS INTERNATIONAL | 2007年 / 33卷 / 06期

关键词：

SiC; precursor; nanowires; growth mechanism;

D O I：

10.1016/j.ceramint.2006.01.016

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Polycarbosilane (PCS) was used as a precursor to prepare SiC reticulated porous ceramics (RPCs) with in situ growth of beta-SiC nanowires at 1000- 1300 degrees C. The nanowires in diameters of similar to 50 nm exist on the surface of the strut and in the fracture surface of strut in SiC RPCs. High resolution transmission electron microscopy (HRTEM) and selected area electron diffraction (SAED) indicate that the nanowire consists of a twinned beta-SiC, which grows along the < 111 > direction. Field emission scanning electron microscopy (FESEM) and energy dispersive spectroscopy (EDS) reveal that beta-SiC nanowire grows by the vapor-liquid-solid (VLS) process at low temperature. The morphologies of the nanowire formed at different temperatures testify the process. As the heat-treated temperature increased, the growth mechanism of the nanowire changes from VLS to vapor-solid (VS). (C) 2006 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

引用

页码：901 / 904

页数：4

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